DocumentCode :
1323821
Title :
Modified Potential Well Formed by \\hbox {Si/SiO}_{2}/ \\hbox {TiN/TiO}_{2}/\\hbox {SiO}_{2}/\\hbox {TaN} for Flash Memory Application
Author :
Zhang, Gang ; Ra, Chang Ho ; Li, Hua-Min ; Shen, Tian-Zi ; Cheong, Byung-ki ; Yoo, Won Jong
Author_Institution :
Dept. of Nanosci. & Technol., Sungkyunkwan Univ., Suwon, South Korea
Volume :
57
Issue :
11
fYear :
2010
Firstpage :
2794
Lastpage :
2800
Abstract :
This paper proposes a modified engineered-potentialwell (MW) for NAND flash memory application. The MW was formed by using a transitional SiO2/SiOx,Na-TiOx,Ny tunnel barrier, a trap-rich TiO2 trapping layer, and an abrupt SiO2 block barrier. The transitional tunnel barrier shrinks to enhance the tunneling of carriers during programming/erasing (P/E) and extends to suppress charge loss during data retention. Deep-level transient spectroscopy suggests that this tunnel barrier has few shallow traps after a N2 + O2 thermal treatment, and the TiO2 trapping layer has deep electron traps. With the variable tunnel barrier and deep electron traps, the MW device showed promising performance in fast programming (<; μs) at low-voltage operation (7-10 MV/cm), good P/E endurance (> 106 P/E cycles), large threshold voltage window (ΔVth =M> V), as well as improved data retention at 125 °C.
Keywords :
NAND circuits; deep level transient spectroscopy; electron traps; elemental semiconductors; flash memories; silicon; silicon compounds; tantalum compounds; titanium compounds; NAND flash memory application; Si-SiO2-TiN-TiO2-SiO2-TaN; carrier tunneling; charge loss; data retention; low-voltage operation; potential well; programming/erasing; temperature 125 degC; thermal treatment; transient spectroscopy; tunnel barrier; Electron traps; Flash memory; Silicon; Tin; Transient analysis; $hbox{TiO}_{2}$ trapping layer; Flash memory; modified engineered-potential-well (MW);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2010.2066200
Filename :
5570944
Link To Document :
بازگشت