Title :
GaAs/AlGaAs quantum well intermixing using buried Al-oxide layer
Author :
Kim, K.S. ; Ha, K.H. ; Han, T.Y. ; Yang, M. ; Lee, Y.-H.
Author_Institution :
Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
fDate :
2/3/2000 12:00:00 AM
Abstract :
Using buried wet-oxidised AlxOj layers to enhance impurity free vacancy diffusion, the intermixing of GaAs/AlGaAs quantum wells has been achieved. A 70 Å thick GaAs quantum well shows a blueshift of 59 meV when the sample is annealed at 950°C for 120s. By cathodoluminescence measurements, it is confirmed that the bandgap transition region is localised laterally within 1 μm of the oxide/nonoxide interface
Keywords :
III-V semiconductors; aluminium compounds; annealing; cathodoluminescence; chemical interdiffusion; gallium arsenide; semiconductor quantum wells; vacancies (crystal); 120 s; 70 angstrom; 950 degC; GaAs-AlGaAs; III-V semiconductors; annealing; bandgap transition region; blueshift; buried wet-oxidised layers; cathodoluminescence measurements; impurity free vacancy diffusion; oxide/nonoxide interface; quantum well intermixing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000238
