Title :
p+-BeTe/n+-ZnSe ESAKI tunnelling heterojunctions for II-VI optoelectronic devices
Author :
Reuscher, G. ; Landwehr, G. ; Keim, M. ; Lugauer, H.-J. ; Fischer, F. ; Waag, Andreas
Author_Institution :
Phys. Inst., Wurzburg Univ., Germany
fDate :
2/3/2000 12:00:00 AM
Abstract :
The realisation of a p+-BeTe/n+-ZnSe ESAKI tunnelling diode is reported. Negative differential resistance was observed under forward bias at room temperature with a peak to valley ratio of 1.55:1. In the backward direction a current density of 400 A/cm 2 was achieved at 3.3 V. These data indicate that p+ -BeTe/n+-ZnSe tunnel diodes are suitable as buried electron to hole converters in II-VI optoelectronic devices
Keywords :
II-VI semiconductors; beryllium compounds; heavily doped semiconductors; negative resistance; p-n heterojunctions; photodiodes; tunnel diodes; wide band gap semiconductors; zinc compounds; 3.3 V; BeTe-ZnSe; II-VI heterojunction; buried electron-to-hole converter; current density; negative differential resistance; optoelectronic device; p+-BeTe/n+-ZnSe ESAKI tunnelling diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000230
