• DocumentCode
    132400
  • Title

    Advantages of GaN in a high-voltage resonant LLC converter

  • Author

    Seeman, Michael D. ; Bahl, Sandeep R. ; Anderson, David I. ; Shah, Ghalib A.

  • Author_Institution
    Texas Instrum., Santa Clara, CA, USA
  • fYear
    2014
  • fDate
    16-20 March 2014
  • Firstpage
    476
  • Lastpage
    483
  • Abstract
    LLC Resonant converters have been popular in recent years by providing highly-efficient, compact isolated power conversion for numerous applications. 48V to 12V and 400V to 12V step-down isolated converters are often required in server, telecom and automotive applications. While the switching losses in LLC converters are eliminated due to zero-voltage switching, the primary-side switch output capacitance limits switching frequency and thus places a lower-bound on the converter size. This switch-node capacitance can be significantly reduced by the use of high-voltage Gallium Nitride (GaN) power transistors. This paper demonstrates a 500W, 380V to 12V LLC converter using GaN transistors which achieves 97.85% efficiency with a 308 W/in3 power density.
  • Keywords
    III-V semiconductors; LC circuits; gallium compounds; power transistors; resonant power convertors; switching convertors; wide band gap semiconductors; zero voltage switching; GaN; automotive application; compact isolated power conversion; efficiency 97.85 percent; high-voltage resonant LLC converter; power 500 W; power density; power transistor; primary-side switch output capacitance; switch-node capacitance; switching loss; telecom application; voltage 400 V to 12 V; voltage 48 V to 12 V; zero-voltage switching; Capacitance; Field effect transistors; Gallium nitride; Silicon; Switches; Windings;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE
  • Conference_Location
    Fort Worth, TX
  • Type

    conf

  • DOI
    10.1109/APEC.2014.6803351
  • Filename
    6803351