Title :
5 GHz, 12 mW NMOS frequency divider
Author :
Weston, H.T. ; Atwood, Donald K. ; Bayruns, R.J.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ
fDate :
7/7/1988 12:00:00 AM
Abstract :
Reports on the development of an NMOS 2:1 frequency divider circuit that operates to over 5 GHz. It is powered from a 2.5 V supply and dissipates only 0.012 W. These results indicate that the use of silicon MOS technology may be extended to very-high-speed low-power applications
Keywords :
counting circuits; digital integrated circuits; elemental semiconductors; field effect integrated circuits; silicon; 12 mW; 2.5 V; 5 GHz; NMOS; Si; frequency divider; semiconductors;
Journal_Title :
Electronics Letters
