Title :
Mixed-mode simulation of DX trap-induced slow transient effects on AlGaAs/GaAs HEMT inverters
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsin-Chu, Taiwan
fDate :
9/1/1991 12:00:00 AM
Abstract :
A mixed level device and circuit simulation was performed to analyze DX trap-induced slow transient effects on the performance degradation of AlGaAs/GaAs high electron mobility transistor (HEMT) circuits. The variation of the output pulsewidth and the hysteretic characteristics of the input-output voltage transfer function in direct-coupled FET logic (DCFL) HEMT inverters have been simulated. In the model, a DX trap rate equation is calculated in the AlGaAs layer. The self-consistent Schrodinger and Poisson equations are solved numerically at each cross section of a device. A two-region Grebene-Ghandhi model is used to derive the I-V characteristics. The simulation confirms that the output pulse broadening and narrowing effects in string cascaded DCFL HEMT inverters are a consequence of the inverter voltage transfer function shift caused by deep traps
Keywords :
III-V semiconductors; aluminium compounds; circuit analysis computing; deep levels; field effect integrated circuits; gallium arsenide; integrated logic circuits; logic gates; transients; AlGaAs-GaAs; DX trap-induced slow transient effects; HEMT inverters; I-V characteristics; Poisson equations; Schrodinger equation; circuit simulation; deep traps; device simulation; direct-coupled FET logic; hysteretic characteristics; input-output voltage transfer function; mixed mode simulation; output pulsewidth; performance degradation; string cascaded DCFL HEMT inverters; two-region Grebene-Ghandhi model; Circuit simulation; Degradation; Electron traps; HEMTs; Performance analysis; Poisson equations; Pulse inverters; Transfer functions; Transient analysis; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
