Title :
Effect of arsenic implantation on electrical characteristics of LPCVD WSi2/n-Si Schottky contacts
Author_Institution :
General Electric Corp. Res. & Dev. Center, Schenectady, NY, USA
fDate :
9/1/1991 12:00:00 AM
Abstract :
Electrical characteristics of As-implanted low-pressure chemical vapor deposition (LPCVD) WSi2/n-Si Schottky barriers are reported. It is shown that As implantation results in a significant Schottky-barrier lowering and an increase in the diode ideality factor n. Silicide annealing prior to As implantation is more effective in reducing Schottky-barrier height. Nearly ohmic characteristics were obtained for As-implanted LPCVD WSi2 Schottky barriers. Arsenic implanted into high-temperature annealed silicide films was more effective in reducing the effective Schottky-barrier height. Detailed SIMS analysis indicated higher As concentration at the silicide/silicon interface when implanted into high-temperature-annealed silicide films
Keywords :
CVD coatings; Schottky effect; arsenic; ion implantation; metallisation; secondary ion mass spectra; silicon; tungsten compounds; LPCVD; SIMS analysis; Schottky contacts; Schottky-barrier lowering; Si substrate; WSi2:As-Si; diode ideality factor; electrical characteristics; ion implantation; low-pressure chemical vapor deposition; ohmic characteristics; silicide annealing; Annealing; Electric variables; Grain size; Integrated circuit interconnections; Ohmic contacts; Plasma temperature; Schottky barriers; Schottky diodes; Silicides; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
