• DocumentCode
    1324641
  • Title

    Effect of arsenic implantation on electrical characteristics of LPCVD WSi2/n-Si Schottky contacts

  • Author

    Shenai, Krishna

  • Author_Institution
    General Electric Corp. Res. & Dev. Center, Schenectady, NY, USA
  • Volume
    38
  • Issue
    9
  • fYear
    1991
  • fDate
    9/1/1991 12:00:00 AM
  • Firstpage
    2033
  • Lastpage
    2035
  • Abstract
    Electrical characteristics of As-implanted low-pressure chemical vapor deposition (LPCVD) WSi2/n-Si Schottky barriers are reported. It is shown that As implantation results in a significant Schottky-barrier lowering and an increase in the diode ideality factor n. Silicide annealing prior to As implantation is more effective in reducing Schottky-barrier height. Nearly ohmic characteristics were obtained for As-implanted LPCVD WSi2 Schottky barriers. Arsenic implanted into high-temperature annealed silicide films was more effective in reducing the effective Schottky-barrier height. Detailed SIMS analysis indicated higher As concentration at the silicide/silicon interface when implanted into high-temperature-annealed silicide films
  • Keywords
    CVD coatings; Schottky effect; arsenic; ion implantation; metallisation; secondary ion mass spectra; silicon; tungsten compounds; LPCVD; SIMS analysis; Schottky contacts; Schottky-barrier lowering; Si substrate; WSi2:As-Si; diode ideality factor; electrical characteristics; ion implantation; low-pressure chemical vapor deposition; ohmic characteristics; silicide annealing; Annealing; Electric variables; Grain size; Integrated circuit interconnections; Ohmic contacts; Plasma temperature; Schottky barriers; Schottky diodes; Silicides; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.83726
  • Filename
    83726
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1324641