An optimized 850°C low-pressure-furnace reoxidized nitrided oxide (ROXNOX) process

Author

Gross, B. Jeffrey ; Krisch, Kathy S. ; Sodini, Charles G.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

Volume

38

Issue

9

fYear

1991

fDate

9/1/1991 12:00:00 AM

Firstpage

2036

Lastpage

2041

Abstract

The electrical characteristics of thin (10 nm) MOS gate dielectrics formed at 850°C by low-pressure furnace nitridation of SiO₂ followed by an oxygen anneal (reoxidation) are described. The ROXNOX process is demonstrated to be readily scalable from 950°C to 850°C through the use of higher partial pressures in the nitridation and reoxidation steps, resulting in the same quality dielectric formed with a lower D_t product. Electrical characterization results of capacitors and transistors with the 850°C ROXNOX dielectric are presented. Reliability of the 850°C ROXNOX dielectric is demonstrated through Fowler-Nordheim and channel hot-electron stressing results

Keywords

dielectric thin films; insulated gate field effect transistors; metal-insulator-semiconductor devices; nitridation; oxidation; semiconductor technology; 850 degC; Fowler Nordheim measurement; MOS gate dielectrics; ROXNOX process; SiO₂-SiO_xN_y; capacitors; channel hot-electron stressing; electrical characteristics; low pressure furnace reoxidized nitrided oxide process; low-pressure furnace nitridation; partial pressures; reliability; reoxidation; transistors; Annealing; Capacitors; Degradation; Dielectrics; Electron traps; Furnaces; Interface states; MOSFETs; Stability; Stress;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.83727

Filename

83727