Title :
A 90 nm CMOS V-Band Low-Noise Active Balun With Broadband Phase-Correction Technique
Author :
Chiang, Hsi-Han ; Huang, Fu-Chien ; Wang, Chao-Shiun ; Wang, Chorng-Kuang
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
This paper presents a V-band low-noise active balun with broadband phase-correction technique (PCT). The proposed technique effectively mitigates the phase deviation of active balun caused by parasitic imbalance and circuit mismatch. This technique is insensitive to frequency, which makes the operation frequency of active balun with the PCT can be extended to millimeter-wave (MMW) band. Within the low noise current-reuse pre-amplifier, this active balun circuit can be employed as low-noise amplifier as well. The measured phase error keeps less than 10 degrees from 50 GHz to 67 GHz, which demonstrates the robust calibration of phase error at MMW frequency. The measured voltage gain and noise figure at 63 GHz are 17.6 dB and 8.6 dB, respectively. The core power consumption is 19 mW from 1.4 V supply voltage with a core area of 0.275 mm2.
Keywords :
CMOS analogue integrated circuits; baluns; field effect MIMIC; low noise amplifiers; low-power electronics; millimetre wave amplifiers; CMOS circuit; V-band low-noise active balun; broadband phase-correction; circuit mismatch; core power consumption; current-reuse pre-amplifier; frequency 63 GHz; gain 17.6 dB; low-noise amplifier; millimeter-wave band; noise figure 8.6 dB; parasitic imbalance; phase deviation; power 19 mW; size 90 nm; voltage 1.4 V; Broadband communication; CMOS integrated circuits; CMOS technology; Gain; Impedance matching; Loading; Noise; Active balun; broadband correction; gain error; low-noise amplifier; millimeter-wave (MMW); phase correction; phase error;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2011.2164135