Title :
Switching characteristics of multigrain (polycrystalline silicon) barrier devices
Author :
Al-bustani, Ausama
Author_Institution :
Dept. of Comput. & Electron., Lancashire Polytech., Preston, UK
fDate :
9/1/1991 12:00:00 AM
Abstract :
The reversible I-V characteristics of poly-Si barrier switches are investigated. A modified analysis is presented to study the two existing threshold modes of operation; namely, the pre-punchthrough mode and the post-punchthrough mode. A gated multigrain barrier switch is also proposed. The relationship between the polysilicon layer parameters and the switching characteristics is investigated. Effects of the recombination-generation mechanism and carrier injection are included in the theory. A comparison between theoretical and available experimental results is also presented
Keywords :
electron-hole recombination; elemental semiconductors; semiconductor switches; silicon; carrier injection; gated multigrain barrier switch; poly-Si barrier switches; polycrystalline Si; polysilicon layer parameters; postpunchthrough mode; prepunchthrough mode; punchthrough; recombination-generation mechanism; reversible I-V characteristics; switching characteristics; Cathodes; Charge carrier density; Charge carrier processes; Current density; Doping; Electron traps; Impurities; Silicon; Switches; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
