A temperature-dependent SOI MOSFET model for high-temperature application (27 °C-300 °C)

Author

Jeon, Deok-Su ; Burk, Dorothea E.

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

38

Issue

9

fYear

1991

fDate

9/1/1991 12:00:00 AM

Firstpage

2101

Lastpage

2111

Abstract

A temperature-dependent model for long-channel silicon-on-insulator (SOI) MOSFETs for use in the temperature range 27 °C-300 °C, suitable for circuit simulators such as SPICE, is presented. The model physically accounts for the temperature-dependent effects in SOI MOSFETs (such as threshold-voltage reduction, increase of leakage current, decrease of generation due to impact ionization, and channel mobility degradation with increase of temperature) which are influenced by the uniqueness of SOI device structure, i.e. the back gate and the floating film body. The model is verified by the good agreement of the simulations with the experimental data. The model is implemented in SPICE2 to be used for circuit and device CAD. Simple SOI CMOS circuits are successfully simulated at different temperatures

Keywords

carrier mobility; electronic engineering computing; impact ionisation; insulated gate field effect transistors; leakage currents; semiconductor device models; semiconductor-insulator boundaries; temperature; 27 to 300 degC; CAD; SOI MOSFET model; SOI device structure; SPICE; SPICE2; back gate; channel mobility degradation; circuit simulators; floating film body; impact ionization; leakage current; long-channel; temperature-dependent model; threshold-voltage reduction; Circuit simulation; Computational modeling; Design automation; Impact ionization; Leakage current; MOSFET circuits; Semiconductor device modeling; Temperature control; Temperature dependence; Temperature distribution;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.83736

Filename

83736