Title :
Junction breakdown instabilities in deep trench isolation structures
Author :
Tsang, Yuk L. ; Aitken, John M.
Author_Institution :
IBM Corp., Hopewell Junction, NY, USA
fDate :
9/1/1991 12:00:00 AM
Abstract :
Junction breakdown voltage instability in a p-n junction formed in bulk silicon adjacent to a deep trench filled with polysilicon was investigated. The structure investigated consists of a 5-μm-deep trench filled with heavily p-doped polysilicon. The trench is open at the bottom and is consequently shorted to the p-substrate. The time-dependent behavior of the walkout or the breakdown voltage instability is similar to that reported for planar p-n junctions terminating on surface oxide. Results suggest that trapping of holes in the trench sidewall dielectric is responsible for this phenomenon. The product of trapping center concentration and capture cross section N σ is estimated to be 90 cm-1
Keywords :
bipolar integrated circuits; electric breakdown of solids; hole traps; integrated circuit technology; stability; breakdown voltage instability; bulk Si; capture cross section; deep trench isolation structures; heavily p-doped polysilicon; high speed bipolar technology; junction breakdown; p-n junction; p-substrate; time-dependent behavior; trapping center concentration; trench sidewall dielectric; Art; Avalanche breakdown; Breakdown voltage; Contacts; Dielectrics; Diodes; Electric breakdown; Isolation technology; P-n junctions; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
