Long Wavelength Infrared InAs/GaSb Superlattice Photodetectors With InSb-Like and Mixed Interfaces

Author

Zhang, Yanhua ; Ma, Wenquan ; Cao, Yulian ; Huang, Jianliang ; Wei, Yang ; Cui, Kai ; Shao, Jun

Author_Institution

Lab. of Nano-Optoelectron., Inst. of Semicond., Beijing, China

Volume

47

Issue

12

fYear

2011

Firstpage

1475

Lastpage

1479

Abstract

We report on long wavelength infrared photodetectors using InAs/GaSb superlattices (SLs) with InSb-like and mixed interfaces (IFs). X-ray diffraction (XRD) measurements indicate that the SLs with mixed IFs have a narrower linewidth. The full-width at half-maximum of the XRD satellite peak is 24 arcsec for the sample with InSb-like IFs and is only 17 arcsec for the sample with mixed IFs. However, in terms of infrared photodetection, InSb-like IFs are superior to the mixed ones. Stronger photoluminescence and photoresponse signals are observed for the sample with InSb-like IFs.

Keywords

III-V semiconductors; X-ray diffraction; gallium compounds; indium compounds; infrared detectors; photodetectors; photoluminescence; semiconductor superlattices; InAs-GaSb-InSb; X-ray diffraction; XRD; infrared photodetection; long wavelength infrared superlattice photodetectors; mixed interfaces; photoluminescence; photoresponse; satellite peak; Photodetectors; Photoluminescence; Superlattices; X-ray diffraction; InAs/GaSb; interfaces; long wavelength infrared photodetector; type II superlattice;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2011.2168947

Filename

6024428