A Low-Noise High Intrascene Dynamic Range CMOS Image Sensor With a 13 to 19b Variable-Resolution Column-Parallel Folding-Integration/Cyclic ADC

Author

Seo, Min-Woong ; Suh, Sung-Ho ; Iida, Tetsuya ; Takasawa, Taishi ; Isobe, Keigo ; Watanabe, Takashi ; Itoh, Shinya ; Yasutomi, Keita ; Kawahito, Shoji

Author_Institution

Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan

Volume

47

Issue

1

fYear

2012

Firstpage

272

Lastpage

283

Abstract

A low temporal noise and high dynamic range CMOS image sensor is developed. A 1Mpixel CMOS image sensor with column-parallel folding-integration and cyclic ADCs has 80μV_rms (1.2e^-) temporal noise, 82 dB dynamic range using 64 samplings in the folding-integration ADC mode. Very high variable gray-scale resolution of 13b through 19b is attained by changing the number of samplings of pixel outputs. The implemented CMOS image sensor using a 0.18-μm technology has the sensitivity of 10-V/lx·s, the conversion gain of 67- μV/e^-, and linear digital code range of more than 4 decades.

Keywords

CMOS image sensors; analogue-digital conversion; image resolution; integrated circuit noise; conversion gain; cyclic ADC; linear digital code range; low-noise high intrascene dynamic range CMOS image sensor; size 0.18 mum; temporal noise; variable-resolution column-parallel folding-integration ADC; very high variable gray-scale resolution; CMOS image sensors; Capacitors; Charge transfer; Dynamic range; Image resolution; Noise; Signal resolution; CMOS image sensor (CIS); column-parallel folding integration/cyclic ADC; high resolution and high dynamic range (DR); low noise; multiple sampling technique;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2011.2164298

Filename

6024457