Title :
A three-parameters-only MOSFET subthreshold current CAD model considering back-gate bias and process variation
Author :
Chen, Ming-Jer ; Ho, Jih-Shin
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
4/1/1997 12:00:00 AM
Abstract :
In this paper we introduce a new subthreshold conduction CAD model for simulation of VLSI subthreshold CMOS analog circuits and systems. This model explicitly formulates the back-gate bias effect and preserves the original advantages of the existing four-parameter model while reducing the fitting parameter number down to three. A transparent relationship between the fitting parameters and the process parameters has been derived, and its correlation with a recently widely used CAD model as well as with a well-known two-parameter model has been established. Our extensive measurement work on n-channel MOSFET´s has highlighted the potential of the model in handling the variations in the subthreshold I-V characteristics at different back-gate biases arising from process variations. The mismatch analysis has further been successfully performed with emphasis on the reverse back-gate bias effect. In summary, the proposed model can serve as a promising alternative in the area of VLSI subthreshold CMOS analog circuit simulation
Keywords :
CMOS analogue integrated circuits; MOSFET; VLSI; circuit CAD; circuit analysis computing; integrated circuit design; semiconductor device models; CAD model; CMOS analog circuits; MOSFET subthreshold current; VLSI; circuit simulation; fitting parameters; process variation; process variations; reverse back-gate bias effect; subthreshold I-V characteristics; three-parameter model; Analog circuits; CMOS analog integrated circuits; CMOS process; Circuit simulation; Fitting; MOSFET circuits; Performance analysis; Semiconductor device modeling; Subthreshold current; Very large scale integration;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on