An efficient solution scheme for the spherical-harmonics expansion of the Boltzmann transport equation [MOS transistors]

Author

Vecchi, Maria Cristina ; Mohring, Jan ; Rudan, Massimo

Author_Institution

Dipt. di Elettronica Inf. e Sistemistica, Bologna Univ., Italy

Volume

16

Issue

4

fYear

1997

fDate

4/1/1997 12:00:00 AM

Firstpage

353

Lastpage

361

Abstract

This paper investigates a number of numerical schemes applicable to the solution of the Boltzmann transport equation by means of a spherical-harmonics expansion (SHE). A new scheme is proposed that improves the solution at low energies, keeping the desired accuracy in the calculation of the mean quantities while saving a significant amount of CPU time. This is important in view of the applications of the method since the typical number of nodes to be used in the combined space-energy domain is in the range of 10⁴-10⁵

Keywords

Boltzmann equation; MOSFET; harmonic analysis; semiconductor device models; Boltzmann transport equation; MOS transistors; combined space-energy domain; mean quantity calculation; semiconductor device simulation; spherical-harmonics expansion; Accuracy; Automatic testing; Boltzmann equation; Computational efficiency; Difference equations; Distribution functions; Electrons; Integrodifferential equations; Scattering; Transforms;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.602472

Filename

602472