Analytic solution of the velocity-saturated MOSFET/MODFET wave equation and its application to the prediction of the microwave characteristics of MODFETs

Author

Roblin, Partick ; Kang, Sung Chan ; Morkoç, Hadis

Author_Institution

Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA

Volume

37

Issue

7

fYear

1990

fDate

7/1/1990 12:00:00 AM

Firstpage

1608

Lastpage

1622

Abstract

An AC model for the saturated MODFET is reported. The MOSFET/MODFET wave equation accounting for velocity saturation and channel length modulation is derived. An exact solution of the wave equation is obtained in terms of Bessel functions. A frequency power series is used to derive analytic expressions for the intrinsic Y -parameters. This AC model is applied to the prediction of the microwave characteristics of 1-μm AlGaAs/GaAs MODFETs and GaAlAs/InGaAs/GaAs pseudomorphic MODFETs. The parameters used by the AC model are extracted by fitting the I-V characteristics. The parasitics are either estimated or measured. A good prediction of the scattering parameters measured from 2 to 18.4 GHz is achieved for different biases. The deviation of the calculated unilateral power gain from the measured values was on average 1.25 and 2.18 dB for the conventional MODFET and the pseudomorphic MODFET, respectively

Keywords

high electron mobility transistors; insulated gate field effect transistors; semiconductor device models; solid-state microwave devices; 1 micron; 2 to 18.4 GHz; AC model; AlGaAs-GaAs; Bessel functions; GaAlAs-InGaAs-GaAs; I-V characteristics; channel length modulation; frequency power series; intrinsic Y-parameters; microwave characteristics; parasitics; unilateral power gain; velocity saturation; velocity-saturated MOSFET/MODFET wave equation; Frequency; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; MOSFET circuits; Partial differential equations; Power measurement; Predictive models; Scattering parameters;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.55746

Filename

55746