Title :
Effect of barrier width on performance of long wavelength GaInAs/InP multi-quantum-well lasers
Author :
Williams, P.J. ; Robbins, D.J. ; Cush, Rosie ; Scott, M.D. ; Davies, J.I. ; Riffat, Javid ; Carter, A.C.
Author_Institution :
Allen Clark Res. Center, Plessey Res. Caswell Ltd., Towcester
fDate :
7/7/1988 12:00:00 AM
Abstract :
It is demonstrated that lasing thresholds in GaInAs/InP MQW lasers under electrical injection are sensitive to the InP barrier thickness and that reducing the barrier width contributes significantly to achieving low-threshold, room temperature operation. In contrast, lasing thresholds under optical pumping show a relative insensitivity to the barrier width. The authors show that this behaviour is consistent with preferential hole capture in the leading wells
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser theory; semiconductor junction lasers; GaInAs-InP; InP barrier thickness; MQW lasers; barrier width; electrical injection; lasing thresholds; long wavelength; low-threshold; multi-quantum-well lasers; optical pumping; preferential hole capture; rate equation model; room temperature operation; semiconductor laser performance;
Journal_Title :
Electronics Letters
