Title :
High-performance HEMT amplifiers with a simple low-loss matching network
Author :
Peter, R. ; Schneider, M.V. ; Wu, Y.S.
Author_Institution :
Inst. of Appl. Phys., Bern Univ., Switzerland
fDate :
9/1/1991 12:00:00 AM
Abstract :
A report is presented on the design and performance of a K-band high electron mobility transistor (HEMT) amplifier whose passive circuit consists of low-loss suspended stripline elements. Single-stage amplifiers were built at 4 GHz and 22 GHz by using readily available commercial HEMT devices. In the desired frequency range from 21 to 23 GHz for the high-frequency design, the best spot noise temperatures were 150 K and 65 K at 21.5 GHz for room and liquid nitrogen temperatures, respectively
Keywords :
high electron mobility transistors; impedance matching; microwave amplifiers; solid-state microwave circuits; 22 GHz; 4 GHz; HEMT amplifiers; K-band; SHF; high electron mobility transistor; low-loss matching network; passive circuit; single-stage amplifiers; suspended stripline elements; Circuit noise; Dielectric losses; Dielectric substrates; Frequency; HEMTs; K-band; Microstrip; Stripline; Temperature distribution; Temperature sensors;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
