Title :
Some characteristics of the crystalline-amorphous threshold point of 31P+ ion-implanted silicon substrates
Author :
Aharoni, Herzl ; Swart, Pieter L. ; Lacquet, Bea M.
Author_Institution :
Dept. of ELectr. & Comput. Eng., Ben-Gurion Univ. of the Negev, Beer-Sheva, Israel
fDate :
8/1/1991 12:00:00 AM
Abstract :
During ion implantation a stage can be reached in which a continuous layer within the implanted crystal changes into amorphous material. The change begins when the implanted dose attains a certain threshold value (DT). In-situ reflectivity (R) versus dose (D) measurements, made during the implantation of 31P+ into Si single crystal substrates showing that both DT and the work (WoT) required to induce the threshold conditions within the implanted crystal increase with the implantation energy are reported. It is also shown that the change in reflectivity ΔRi, which occurs in the dose range that contains DT, is a function of E and peaks at 140 keV, the energy at which the damaged layer becomes buried. The ratio DA/DT is found to be a decreasing function of E
Keywords :
amorphisation; elemental semiconductors; ion beam effects; ion implantation; phosphorus; reflectivity; semiconductor doping; silicon; substrates; 31P+ ion-implanted; Si:P substrates; crystalline-amorphous threshold point; reflectivity; semiconductor; Africa; Amorphous materials; Crystallization; Ion implantation; Laboratories; Maintenance engineering; Reflectivity; Scattering; Silicon; Substrates;
Journal_Title :
Nuclear Science, IEEE Transactions on
