Projecting gate oxide reliability and optimizing reliability screens

Author

Moazzami, Reza ; Hu, Chenming

Author_Institution

Dept. of Electr. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

37

Issue

7

fYear

1990

fDate

7/1/1990 12:00:00 AM

Firstpage

1643

Lastpage

1650

Abstract

The effect of time-dependent stress voltage and temperature on the reliability of thin SiO₂ films is incorporated in a quantitative defect-induced breakdown model. Based on this model, design curves which can be used along with a breakdown voltage distribution for an oxide technology to determine optimal burn-in conditions are presented. The tradeoff between improved reliability and lower burn-in yield for different gate oxide technologies can also be examined quantitatively using the model

Keywords

MOS integrated circuits; circuit reliability; insulating thin films; metal-insulator-semiconductor structures; silicon compounds; SiO₂ films; breakdown voltage distribution; burn-in yield; design curves; gate oxide reliability; optimal burn-in conditions; oxide technology; quantitative defect-induced breakdown model; reliability screens; temperature; time-dependent stress voltage; Breakdown voltage; Circuits; Dielectric breakdown; Electric breakdown; Life estimation; Predictive models; Stress; Temperature distribution; Testing; Voltage measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.55751

Filename

55751