Title :
Ultra-wideband source using gallium arsenide photoconductive semiconductor switches
Author :
Schoenberg, Jon S H ; Burger, Jeffrey W. ; Tyo, J. Scott ; Abdalla, Michael D. ; Skipper, Michael C. ; Buchwald, Walter R.
Author_Institution :
Phillips Lab., US Air Force, Kirtland AFB, NM, USA
fDate :
4/1/1997 12:00:00 AM
Abstract :
An ultrawide-band (UWB) pulse generator based on high-gain (lock-on mode) gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS´s) is presented. Revised PCSS contact design shows improved performance in hold-off field, on-state switch potential, and switching jitter, while reducing the switch volume by 75% compared to previous designs. A compact laser diode module operates at 904 nm and triggers the PCSS at pulse repetition rates (PRR) of up to 2 kHz. The 625 W laser diode output power is found to be sufficient to produce switching jitter of 65 ps rms at a switched field of 80 kV/cm. The PCSS switching jitter is found to have a strong dependence upon the switched field when triggered with the laser diode module. The revised PCSS geometry is easily integrated into a compact, parallel-plate source used to drive a TEM horn impulse-radiating antenna. The radiated field has a rise time of 330 ps and an adjustable low-frequency spectrum
Keywords :
III-V semiconductors; gallium arsenide; horn antennas; jitter; microwave antenna arrays; microwave generation; photoconducting switches; power semiconductor switches; pulse generators; pulsed power switches; 625 W; 904 nm; GaAs; GaAs photoconductive semiconductor switches; TEM horn impulse-radiating antenna; adjustable low-frequency spectrum; compact laser diode module; high power microwave radiation source; hold-off field; on-state switch potential; parallel-plate source; switch volume; switching jitter; ultra-wideband source; ultrawide-band pulse generator; Contacts; Diode lasers; Gallium arsenide; Jitter; Laser mode locking; Photoconducting devices; Photoconductivity; Power semiconductor switches; Pulse generation; Ultra wideband technology;
Journal_Title :
Plasma Science, IEEE Transactions on
