DocumentCode :
1325922
Title :
Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFETs
Author :
Chung, James E. ; Jeng, Min-Chie ; Moon, James E. ; Ko, Ping-Keung ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Volume :
37
Issue :
7
fYear :
1990
fDate :
7/1/1990 12:00:00 AM
Firstpage :
1651
Lastpage :
1657
Abstract :
Hot-electron currents and degradation in deep submicrometer MOSFETs at 3.3 V and below are studied. Using a device with L eff=0.15 μm and Tox=7.5 nm, substrate current is measured at a drain bias as low as 0.7 V; gate current is measured at a drain bias as low as 1.75 V. Using the charge-pumping technique, hot-electron degradation is also observed at drain biases as low as 1.8 V. These voltages are believed to be the lowest reported values for which hot-electron currents and degradation have been directly observed. These low-voltage hot-electron phenomena exhibit similar behavior to hot-electron effects present at higher biases and longer channel lengths. No critical voltage for hot-electron effects (such as the Si-SiO2 barrier height) is apparent. Established hot-electron degradation concepts and models are shown to be applicable in the low-voltage deep submicrometer regime. Using these established models, the maximum allowable power supply voltage to insure a 10-year device lifetime is determined as a function of channel length (down to 0.15 μm) and oxide thicknesses
Keywords :
hot carriers; insulated gate field effect transistors; semiconductor-insulator boundaries; 0.7 V; 1.75 V; 3.3 V; Si-SiO2 barrier height; channel lengths; charge-pumping technique; deep-submicrometer; degradation; device lifetime; drain bias; gate current; hot-electron currents; low-voltage deep submicrometer regime; low-voltage hot-electron phenomena; power supply voltage; substrate current; Charge pumps; Current measurement; Degradation; Electrons; MOSFETs; Moon; Power supplies; Power system modeling; Power system reliability; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.55752
Filename :
55752
Link To Document :
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