DocumentCode
1326056
Title
Microwave small-signal modelling of FinFETs using multi-parameter rational fitting method
Author
Deschrijver, Dirk ; Avolio, Gustavo ; Schreurs, Dominique ; Dhaene, Tom ; Crupi, Giovanni ; Knockaert, Luc
Author_Institution
Dept. of Inf. Technol. (INTEC), Ghent Univ., Ghent, Belgium
Volume
47
Issue
19
fYear
2011
Firstpage
1084
Lastpage
1086
Abstract
An effective approach based on a multi-parameter rational fitting technique is proposed to model the microwave small-signal response of active solid-state devices. The model is identified by fitting multi-bias scattering-parameter measurements and its analytical expression is implemented in a commercial microwave circuit simulator. The approach has been applied to the modelling of a silicon-based FinFET, and an excellent agreement is obtained between the measured data and model predictions.
Keywords
MOSFET; S-parameters; elemental semiconductors; microwave field effect transistors; semiconductor device models; silicon; Si; active solid-state devices; microwave circuit simulator; microwave small-signal modelling; multibias scattering-parameter measurements; multiparameter rational fitting method; silicon-based FinFET;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2011.2394
Filename
6025147
Link To Document