DocumentCode :
1326109
Title :
Resonance in Link RF Gain by Negative Photocurrent Resistance of Electroabsorption Modulator Under Very High Optical Power
Author :
Shin, D.S.
Author_Institution :
Dept. of Appl. Phys., Hanyang Univ., Ansan, South Korea
Volume :
28
Issue :
21
fYear :
2010
Firstpage :
3095
Lastpage :
3099
Abstract :
We examine the photocurrent effect in the electroabsorption modulator (EAM) under very high optical power and investigate its implication in the link radio-frequency (RF) gain. After reviewing the effect of the photocurrent in the EAM, using the voltage-source model with the device capacitance included, we demonstrate a possibility that the RF gain can be enhanced by resonance due to the photocurrent if the photocurrent decreases with device bias, exhibiting negative differential resistance. We explore an EAM with intrastep quantum wells showing blueshift to achieve the negative photocurrent resistance and demonstrate a case where an enhancement in the link RF gain is possible.
Keywords :
capacitance; electro-optical modulation; electroabsorption; microwave photonics; negative resistance; optical resonators; photoconductivity; quantum well devices; spectral line shift; blueshift; device capacitance; electroabsorption modulator; intrastep quantum wells; link RF gain; link radiofrequency gain; negative photocurrent resistance; very high optical power; voltage-source model; Gain; Optical modulation; Optical saturation; Photoconductivity; Radio frequency; Resistance; Electroabsorption modulator; RF gain; photocurrent; resonance;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.2010.2076776
Filename :
5575365
Link To Document :
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