• DocumentCode
    1326227
  • Title

    A Neural Stimulator Frontend With High-Voltage Compliance and Programmable Pulse Shape for Epiretinal Implants

  • Author

    Noorsal, Emilia ; Sooksood, Kriangkrai ; Xu, Hongcheng ; Hornig, Ralf ; Becker, Joachim ; Ortmanns, Maurits

  • Author_Institution
    Inst. of Microelectron., Univ. of Ulm, Ulm, Germany
  • Volume
    47
  • Issue
    1
  • fYear
    2012
  • Firstpage
    244
  • Lastpage
    256
  • Abstract
    This paper presents an integrated neural stimulator with highly efficient and flexible frontend which is intended for an epiretinal implant with 1024 electrodes. It features programmable stimulation pulse shapes, a high-voltage (HV) output driver with compliance monitor for supply voltage adaptation, active and passive charge balancers, and electrode impedance measurement. Area and power efficiency is achieved by global timing assignment and local amplitude control over a bus at the local stimulation units. Major power savings in the distributed digital control units are realized by implementing global and local clock gating. Two stimulator frontends have been fabricated in a 0.35 μm HVCMOS process. Each frontend features four demultiplexed outputs and consumes 0.2 mm2 core area. A maximum voltage compliance of 20 V is achieved and up to 1 mA of output current can be adjusted with up to 50 dB dynamic range. In vitro experimental results performed on a platinum black electrode in 0.9% saline solution are given.
  • Keywords
    biomedical electrodes; electric impedance measurement; eye; neurophysiology; prosthetics; HVCMOS process; clock gating; electrode impedance measurement; epiretinal implants; functional electrical stimulation; high-voltage compliance; neural stimulator frontend; platinum black electrode; programmable pulse shape; voltage 20 V; Electrodes; Impedance; Implants; Monitoring; Shape; Timing; Voltage control; Active charge balancing; HVCMOS; charge balancing; compliance monitor; current driver; epiretinal implant; flexible stimulator; functional electrical stimulation (FES); high voltage (HV); implantable biomedical devices; level shifter; neural stimulator; offset regulation charge balancing; programmable stimulation patterns; visual prosthesis;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.2011.2164667
  • Filename
    6025221