Title :
A Physics-Based Compact Model for Polysilicon Resistors
Author :
Spessot, Alessio ; Molteni, Mario ; Ventrice, Domenico ; Fantini, Paolo
Author_Institution :
R&D Technol. Dev., Numonyx, Agrate Brianza, Italy
Abstract :
A physics-based compact model describing the electrothermal behavior of polysilicon resistors considering both the roles of the grain-boundary potential barriers and the transport inside the silicon decananocrystallites is presented. The model accurately captures the resistivity modulation as a function of temperature, dopant concentration, and grain size, including also the self-heating-induced nonlinear effects in the current-voltage relationship. An accurate agreement of the model against the experimental characterization is reported.
Keywords :
grain boundaries; grain size; resistors; semiconductor doping; dopant concentration; electrothermal behavior; grain size; grain-boundary potential barriers; physics-based compact model; polysilicon resistors; Conductivity; Doping; Grain size; Resistors; Semiconductor process modeling; Thermal resistance; Compact modeling; electrothermal modeling; polysilicon; resistor;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2066255
