A Physics-Based Compact Model for Polysilicon Resistors

A physics-based compact model describing the electrothermal behavior of polysilicon resistors considering both the roles of the grain-boundary potential barriers and the transport inside the silicon decananocrystallites is presented. The model accurately captures the resistivity modulation as a function of temperature, dopant concentration, and grain size, including also the self-heating-induced nonlinear effects in the current-voltage relationship. An accurate agreement of the model against the experimental characterization is reported.