Growth and Characterization of CZT Crystals by the Vertical Bridgman Method for X-Ray Detector Applications

Author

Zappettini, Andrea ; Marchini, Laura ; Zha, Mingzheng ; Benassi, Giacomo ; Zambelli, Nicola ; Calestani, Davide ; Zanotti, Lucio ; Gombia, Enos ; Mosca, Roberto ; Zanichelli, Massimiliano ; Pavesi, Maura ; Auricchio, Natalia ; Caroli, Ezio

Author_Institution

IMEM-CNR, Parma, Italy

Volume

58

Issue

5

fYear

2011

Firstpage

2352

Lastpage

2356

Abstract

CdZnTe crystals were grown by the vertical Bridgman method in closed quartz ampoules. The crystalline quality and the impurity content of these crystals were studied. Several X-ray detectors were cut out of these crystals. The resistivity, emission spectra, μτ product, and spectroscopic characteristics of these detectors were extensively measured and compared with the characteristics of detectors obtained from CdZnTe crystals grown by the boron oxide encapsulated vertical Bridgman technique. The detectors prepared from crystals grown without boron oxide show good μτ value, spectroscopic resolution, and higher reproducibility. The influence of growth method on impurity content and on detector response was discussed.

Keywords

II-VI semiconductors; X-ray detection; cadmium compounds; carrier mobility; crystal growth from melt; electrical resistivity; impurities; luminescence; semiconductor growth; zinc compounds; μτ product; CdZnTe; X-ray detector applications; closed quartz ampoules; crystal growth; crystalline quality; emission spectra; impurity content; reproducibility; resistivity; vertical Bridgman method; Boron; Conductivity; Crystals; Detectors; Energy resolution; Impurities; Boron oxide vertical Bridgman; CdZnTe; X-ray detectors; mobility-lifetime product; vertical Bridgman;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2011.2163643

Filename

6025230