Title :
Growth and Characterization of CZT Crystals by the Vertical Bridgman Method for X-Ray Detector Applications
Author :
Zappettini, Andrea ; Marchini, Laura ; Zha, Mingzheng ; Benassi, Giacomo ; Zambelli, Nicola ; Calestani, Davide ; Zanotti, Lucio ; Gombia, Enos ; Mosca, Roberto ; Zanichelli, Massimiliano ; Pavesi, Maura ; Auricchio, Natalia ; Caroli, Ezio
Author_Institution :
IMEM-CNR, Parma, Italy
Abstract :
CdZnTe crystals were grown by the vertical Bridgman method in closed quartz ampoules. The crystalline quality and the impurity content of these crystals were studied. Several X-ray detectors were cut out of these crystals. The resistivity, emission spectra, μτ product, and spectroscopic characteristics of these detectors were extensively measured and compared with the characteristics of detectors obtained from CdZnTe crystals grown by the boron oxide encapsulated vertical Bridgman technique. The detectors prepared from crystals grown without boron oxide show good μτ value, spectroscopic resolution, and higher reproducibility. The influence of growth method on impurity content and on detector response was discussed.
Keywords :
II-VI semiconductors; X-ray detection; cadmium compounds; carrier mobility; crystal growth from melt; electrical resistivity; impurities; luminescence; semiconductor growth; zinc compounds; μτ product; CdZnTe; X-ray detector applications; closed quartz ampoules; crystal growth; crystalline quality; emission spectra; impurity content; reproducibility; resistivity; vertical Bridgman method; Boron; Conductivity; Crystals; Detectors; Energy resolution; Impurities; Boron oxide vertical Bridgman; CdZnTe; X-ray detectors; mobility-lifetime product; vertical Bridgman;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2163643
