Title :
Self-aligned AlInAs/GaInAs HBTs for digital IC applications
Author :
Tanaka, S. ; Furukawa, A. ; Baba, T. ; Ohta, K. ; Madihian, M. ; Honjo, K.
Author_Institution :
NEC Corp., Kawasaki, Japan
fDate :
7/7/1988 12:00:00 AM
Abstract :
An AlInAs/GaInAs heterojunction bipolar transistor (HBT) with a self-aligned device structure has been realised. The smallest device has an emitter-base junction area as small as 1.0×10 μm. A 17-stage nonthreshold logic (NTL) ring oscillator is also fabricated, which is the first logic IC implemented with HBTs on InP substrates
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; digital integrated circuits; gallium arsenide; indium compounds; integrated logic circuits; AlInAs-GaInAs-InP; HBTs; III-V semiconductors; InP substrates; digital IC applications; heterojunction bipolar transistor; logic IC; monolithic IC; nonthreshold logic; self-aligned device structure;
Journal_Title :
Electronics Letters
