Cryogenic performance of a high-speed GaInAs/InP p-i-n photodiode

Author

Zhang, Y.M. ; Borzenets, V. ; Dubash, N. ; Reynolds, T. ; Wey, Y.G. ; Bowers, J.

Author_Institution

Conductus Inc., Sunnyvale, CA, USA

Volume

15

Issue

3

fYear

1997

fDate

3/1/1997 12:00:00 AM

Firstpage

529

Lastpage

533

Abstract

The cryogenic performance of a high-speed GaInAs/InP p-i-n photodiode, with graded bandgap layers at the heterostructure interfaces, was investigated for the first time. DC measurements show that the dark current of the diode decreases sharply as the temperature decreases from 300 to 200 K. A factor of 1000 in dark current reduction was found for this photodiode, when it was cooled from room temperature to about 150 K. Similar modulation bandwidths were found for this device for temperatures between 9 and 300 K, with a bandwidth greater than 20 GHz. No degradation was found in performance at cryogenic temperature compared to room temperature. This enables direct integration of high-speed photodiodes with superconductive and other cryogenic electronics

Keywords

III-V semiconductors; cryogenic electronics; dark conductivity; gallium arsenide; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; 150 K; 20 GHz; 300 to 200 K; DC measurements; GaInAs-InP; cooling; cryogenic electronics; cryogenic performance; dark current; graded bandgap layers; heterostructure interfaces; high-speed GaInAs/InP p-i-n photodiode; integration; modulation bandwidths; room temperature; superconductive electronics; Bandwidth; Cryogenics; Current measurement; Dark current; Degradation; Indium phosphide; P-i-n diodes; PIN photodiodes; Photonic band gap; Temperature;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.557569

Filename

557569