Title :
Reliability and degradation behaviors of semi-insulating Fe-doped InP buried heterostructure lasers fabricated by RIE and MOVPE
Author :
Mawatari, Hiroyasu ; Fukuda, Mitsuo ; Matsumoto, Shin-ichi ; Kishi, Kenji ; Itaya, Yoshio
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
3/1/1997 12:00:00 AM
Abstract :
We clarified the degradation behaviors of semi-insulating buried heterostructure lasers in which mesa structures were fabricated by reactive ion etching (RIE) and then buried in semi-insulating Fe-doped InP grown by metal organic vapor phase epitaxy (MOVPE). The degradation rate and mode correlated with the quality of the buried heterostructure (BH) interface. Based on the correlation, a condition for highly stable semi-insulating Fe-doped InP buried heterostructure (SIBH) lasers was demonstrated and confirmed experimentally and statistically
Keywords :
III-V semiconductors; indium compounds; iron; optical fabrication; quantum well lasers; semiconductor device reliability; semiconductor growth; sputter etching; vapour phase epitaxial growth; GaInAsP; InP:Fe; MOVPE; MQW structure; RIE; correlation; degradation behavior; degradation rate; fabrication; interface quality; mesa structures; mode; reactive ion etching; reliability; semi-insulating Fe-doped InP buried heterostructure lasers; Doping; Epitaxial growth; Epitaxial layers; Etching; Fiber lasers; Indium phosphide; Iron; Laser modes; Laser stability; Thermal degradation;
Journal_Title :
Lightwave Technology, Journal of
