DocumentCode :
1327
Title :
Effects of nitrogen flow rate in ohmic contacts on InAlN/GaN heterostructures
Author :
Geum, Dae-Myeong ; Shin, Seung Heon ; Park, Min-Su ; Jang, Jae-Hyung
Author_Institution :
Sch. of Inf. & Commun., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Volume :
50
Issue :
21
fYear :
2014
fDate :
October 9 2014
Firstpage :
1545
Lastpage :
1547
Abstract :
The effects of nitrogen (N2) flow rate during high-temperature annealing were investigated for Ti/Al/Ni/Au ohmic metallisation on InAlN/GaN heterostructures. The samples annealed at 900°C for 100 s at a 30 SCCM N2 flow rate had the highest ohmic contact performance: a contact resistance of 0.12 Ω·mm, transfer length of 0.31 μm and specific contact resistivity of 3.42 × 10-7 Ω·cm2.
Keywords :
III-V semiconductors; aluminium; aluminium compounds; annealing; contact resistance; gallium compounds; gold; high-temperature techniques; indium compounds; metallisation; nickel; nitrogen; ohmic contacts; semiconductor heterojunctions; semiconductor-metal boundaries; titanium; wide band gap semiconductors; InAlN-GaN; N2; SCCM N2 flow rate; Ti-Al-Ni-Au; contact resistance; heterostructures; high-temperature annealing; nitrogen flow rate effects; ohmic contact performance; ohmic metallisation; specific contact resistivity; temperature 900 degC; transfer length;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2014.2061
Filename :
6926982
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1327
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