Title :
Recent developments in GaAs power switching devices including device modeling
Author :
White, Robert V. ; Miller, Greg J. ; Duduman, Bogdan M. ; Erickson, Robert
Author_Institution :
Univ. of Colorado - Boulder, Boulder, CO, USA
Abstract :
A new GaAs power switching device, the gFET™ switch was introduced at APEC 2013. This paper describes devices developed since APEC 2013 including depletion mode devices with nominal on resistances of 7, 14 and 40 MΩ as well as an enhancement mode device with a nominal on resistance of 40 MΩ. The enhancement mode device is particularly well suited for use as a control switch in buck converters. The paper also describes the development of SPICE models from the experimental data.
Keywords :
III-V semiconductors; SPICE; elemental semiconductors; power semiconductor switches; switching convertors; SPICE models; buck converters; control switch; depletion mode devices; enhancement mode device; gFET switch; gallium arsenide power switching devices; power electronics; Capacitance; Gallium arsenide; HEMTs; Logic gates; MODFETs; Switches; Threshold voltage;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE
Conference_Location :
Fort Worth, TX
DOI :
10.1109/APEC.2014.6803506
