A Novel Model for Implementation of Gamma Radiation Effects in GaAs HBTs

Author

Zhang, Jincan ; Zhang, Yuming ; Lu, Hongliang ; Zhang, Yimen ; Liu, Min

Author_Institution

Microelectron. Inst., Xidian Univ., Xi´´an, China

Volume

60

Issue

12

fYear

2012

Firstpage

3693

Lastpage

3698

Abstract

For predicting the effects of gamma radiation on gallium-arsenide (GaAs) heterojunction bipolar transistors (HBTs), a novel model is presented in this paper, considering the radiation effects. Based on the analysis of radiation-induced degradation in forward base current and cutoff frequency, three semiempirical models to describe the variation of three sensitive model parameters are used for simulating the radiation effects within the framework of a simplified vertical bipolar inter-company model. Its validity was demonstrated by analysis of the experimental results of GaAs HBTs before and after gamma radiation.

Keywords

III-V semiconductors; gallium arsenide; gamma-ray effects; heterojunction bipolar transistors; semiconductor device models; GaAs; GaAs HBT; cutoff frequency; forward base current; gallium-arsenide; gamma radiation effects; heterojunction bipolar transistors; radiation-induced degradation; simplified vertical bipolar inter-company; three semiempirical models; Current measurement; Degradation; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit modeling; Radiation effects; Solid modeling; Cutoff frequency; forward base current; gamma radiation effects; heterojunction bipolar transistor (HBT); semiconductor device modeling; vertical bipolar inter-company (VBIC);

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2012.2221137

Filename

6339023