• DocumentCode
    1327316
  • Title

    Ion-beam-induced epitaxial crystallisation (IBIEC) of amorphous silicon layers produced by chemical vapour deposition

  • Author

    Skorupa, Wolfgang ; Voelskow, M. ; MatthÄi, J. ; Knothe, P.

  • Author_Institution
    Central Inst. for Nucl. Res., Acad. of Sci., Dresden, East Germany
  • Volume
    24
  • Issue
    14
  • fYear
    1988
  • fDate
    7/7/1988 12:00:00 AM
  • Firstpage
    875
  • Lastpage
    876
  • Abstract
    Amorphous silicon layers deposited by chemical vapour deposition on monocrystalline silicon substrates were epitaxially recrystallised by ion beam induced epitaxial crystallisation at 400°C after preamorphisation of the transition region layer/substrate. In this manner, a layer with a thickness of 400 nm was recrystallised by implanting silicon ions at 330 keV with a dose of about 1×1017 cm-2
  • Keywords
    CVD coatings; amorphous semiconductors; elemental semiconductors; epitaxial growth; ion implantation; recrystallisation; semiconductor epitaxial layers; semiconductor growth; silicon; 330 keV; 400 degC; 400 nm; Si ion implantation; amorphous Si deposition; chemical vapour deposition; elemental semiconductors; epitaxial-recrystallisation; ion beam induced epitaxial crystallisation; monocrystalline Si substrates; preamorphisation; semiconductor growth; solid phase epitaxy; transition region layer/substrate;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    8395
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1327316