DocumentCode
1327558
Title
Performance comparison of triple and tandem multijunction a-Si:H solar cells: a numerical study
Author
Pawlikiewicz, Adam H. ; Guha, Subhendu
Author_Institution
Energy Conversion Devices Inc., Troy, MI, USA
Volume
37
Issue
7
fYear
1990
fDate
7/1/1990 12:00:00 AM
Firstpage
1758
Lastpage
1762
Abstract
The numerically simulated performances of two subcell tandem and three subcell triple amorphous silicon-based, multijunction solar cells are compared. The current-voltage characteristics are calculated using a simulation program which allows for accurate determination of single-junction or multijunction cell response under monochromatic or global AM1.5 spectrum. The validity of the solar cell model is confirmed by the excellent agreement between the simulated and measured characteristics of in-house fabricated 13.0% tandem and 13.7% triple cells with a minimum optical bandgap of 1.4 eV. It is shown that if an even narrower bandgap material of 1.3 eV were used, the triple junction device would exceed the tandem by over 1% under global AM1.5 (14.2% versus 13.2%). Assuming that both cells absorb the same amount of light, this difference is mainly due to the weaker electric fields in the double-junction cell in which the individual cell thicknesses are larger
Keywords
amorphous semiconductors; elemental semiconductors; hydrogen; silicon; solar cells; current-voltage characteristics; electric fields; global AM1.5; global AM1.5 spectrum; minimum optical bandgap; monochromatic; multijunction solar cells; simulation program; solar cells; subcell tandem; tandem multijunction; triple junction device; Amorphous materials; Current-voltage characteristics; Germanium silicon alloys; Infrared spectra; Large-scale systems; Photonic band gap; Photovoltaic cells; Poisson equations; Silicon alloys; Silicon germanium;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.55765
Filename
55765
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