DocumentCode
1327669
Title
High-temperature CW operation of visible light-emitting GaInP/AlGaInP inner stripe laser diodes
Author
Okuda, Haruhisa ; Ishikawa, Masatoshi ; Uematsu, Yutaka
Volume
24
Issue
14
fYear
1988
fDate
7/7/1988 12:00:00 AM
Firstpage
877
Lastpage
879
Abstract
High-temperature CW operation up to 90°C was achieved in GaInP/AlGaInP visible-light-emitting inner stripe laser diodes with optimised thicknesses and doping levels of the p -cladding layer. The CW threshold current was 65 mA at room temperature. The characteristic temperature was 120 K below 55°C and 85 K above 55°C. The lasing wavelength was 670 nm. The laser diodes have been operated for more than 1000 h at 60°C, 3 mW
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; semiconductor junction lasers; 3 mW; 55 to 90 degC; 65 mA; 670 nm; CW operation; CW threshold current; GaInP-AlGaInP; high temperature operation; inner stripe laser diodes; optimised doping levels; optimised thicknesses; p-cladding layer; semiconductor lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
8397
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