Title :
Effect of Accumulated Charge on the Total Ionizing Dose Response of a NAND Flash Memory
Author :
Kay, Matthew J. ; Gadlage, Matthew J. ; Duncan, Adam R. ; Ingalls, David ; Howard, Andrew ; Oldham, Timothy R.
Author_Institution :
NSWC Crane, Crane, IN, USA
Abstract :
Consecutive write operations performed on a Samsung NAND flash memory are shown to significantly increase the total ionizing dose level at which data corruption occurs. Consequences of multiple consecutive write operations are discussed as well as the mechanisms at work. Elevated temperature exposure and page location within a block of the memory are shown to have significant effects on the amount of data corruption observed. The hardness assurance implications of these effects are discussed.
Keywords :
NAND circuits; dosimetry; flash memories; logic gates; radiation effects; Samsung NAND flash memory; data corruption; elevated temperature exposure; hardness assurance implication; multiple consecutive write operations; total ionizing dose response; Annealing; Flash memory; Radiation effects; Transistors; Flash memories; radiation effects; total dose effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2220156
