Title :
An improved junction field-effect transistor static model for integrated circuit simulation
Author :
Wong, W.W. ; Liou, J.J. ; Prentice, J.
Author_Institution :
Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL, USA
fDate :
7/1/1990 12:00:00 AM
Abstract :
A physics-based junction field-effect transistor (JFET) static model for integrated circuit simulation is developed. The model covers the behavior of the linear and saturation current regions without requiring fitting parameters. Subthreshold characteristics in the saturation region are also included in the model. Excellent agreement is obtained when the model is compared with experimental data
Keywords :
junction gate field effect transistors; semiconductor device models; integrated circuit simulation; junction field-effect transistor static model; linear region; saturation current regions; subthreshold characteristics; Digital circuits; FETs; Fabrication; Integrated circuit measurements; Integrated circuit modeling; JFET integrated circuits; Power electronics; Predictive models; Steady-state; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
