Title :
Ionizing Radiation Effects on Non Volatile Read Only Memory Cells
Author :
Libertino, Sebania ; Corso, Domenico ; Lisiansky, Michael ; Roizin, Yakov ; Palumbo, Felix ; Principato, Fabio ; Pace, Calogero ; Finocchiaro, Paolo ; Lombardo, Salvatore
Author_Institution :
Ist. per la Microelettronica e Microsistemi (IMM), Catania, Italy
Abstract :
Threshold voltage (Vth) and drain-source current (IDS) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. Vth loss fluctuations are well explained by the same Weibull statistics regardless of the irradiation species and total dose. Results of drain current measurements in-situ during irradiation with photons and ions reveal a step-like increase of IDS with the total irradiation dose. A brief physical explanation is also provided.
Keywords :
Weibull distribution; ion beam effects; read-only storage; Weibull statistics; drain-source current; ion irradiation; ionizing radiation effects; nitride read only memories; nonvolatile read only memory cells; photon irradiation; threshold voltage loss fluctuations; total irradiation dose; Flash memory; Ionizing radiation; Radiation effects; Radiation hardening; Read only memory; Flash memories; nitride read-only memories (NROM); oxide/nitride/oxide (ONO); radiation hardness;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2219071
