Ionizing Radiation Effects on Non Volatile Read Only Memory Cells

Author

Libertino, Sebania ; Corso, Domenico ; Lisiansky, Michael ; Roizin, Yakov ; Palumbo, Felix ; Principato, Fabio ; Pace, Calogero ; Finocchiaro, Paolo ; Lombardo, Salvatore

Author_Institution

Ist. per la Microelettronica e Microsistemi (IMM), Catania, Italy

Volume

59

Issue

6

fYear

2012

Firstpage

3016

Lastpage

3020

Abstract

Threshold voltage (V_th) and drain-source current (I_DS) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. V_th loss fluctuations are well explained by the same Weibull statistics regardless of the irradiation species and total dose. Results of drain current measurements in-situ during irradiation with photons and ions reveal a step-like increase of I_DS with the total irradiation dose. A brief physical explanation is also provided.

Keywords

Weibull distribution; ion beam effects; read-only storage; Weibull statistics; drain-source current; ion irradiation; ionizing radiation effects; nitride read only memories; nonvolatile read only memory cells; photon irradiation; threshold voltage loss fluctuations; total irradiation dose; Flash memory; Ionizing radiation; Radiation effects; Radiation hardening; Read only memory; Flash memories; nitride read-only memories (NROM); oxide/nitride/oxide (ONO); radiation hardness;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2012.2219071

Filename

6340370