Title :
Room temperature unpassivated InAs p-i-n photodetectors grown by molecular beam epitaxy
Author :
Lin, Ray-Ming ; Tang, Shiang-Feng ; Lee, Si-Chen ; Kuan, Chieh-Hsiung ; Chen, Gin-Shiang ; Sun, Tai-Ping ; Wu, Jyh-Chiarng
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
2/1/1997 12:00:00 AM
Abstract :
An unpassivated InAs p-i-n photodetector with excellent performance at room temperature was demonstrated. The zero-bias resistance area products of the diode with 720-nm thick i-layer are 8.1 Ω-cm2 at room temperature and as high as 1.3 M Ω-cm2 at 77 K. At 77 K, the diode exhibits a breakdown voltage exceeding 13 V. When tested under a 500 K blackbody source, the measured detectivity limited by Johnson noise is 1.2×1010 cm-Hz½/W at room temperature and 8.1×10 11 cm-Hz½/W at 77 K. To our knowledge, this is the best data for a room temperature infrared detector
Keywords :
III-V semiconductors; indium compounds; infrared detectors; molecular beam epitaxial growth; p-i-n photodiodes; photodetectors; semiconductor growth; InAs; InAs p-i-n photodetector; Johnson noise; blackbody source; breakdown voltage; detectivity; molecular beam epitaxy growth; room temperature infrared detector; unpassivated device; zero-bias resistance area product; Infrared detectors; Molecular beam epitaxial growth; P-i-n diodes; PIN photodiodes; Passivation; Photodetectors; Photonic band gap; Semiconductor diodes; Sun; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
