3-D topography simulator (3-D MULSS) based on a physical description of material topography

Author

Fujinaga, Masato ; Kotani, Norihiko

Author_Institution

ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan

Volume

44

Issue

2

fYear

1997

fDate

2/1/1997 12:00:00 AM

Firstpage

226

Lastpage

238

Abstract

This paper presents a three-dimensional (3-D) topography simulator (3-D MULSS), and its applications. We focus on the description of the material surface and the algorithm of the surface advancement. Then we propose a 3-D topography simulation algorithm, with consideration of the probe size of observation, and based on the integration formula of the balance equation. Next, we show the simulation results of the 3-D MULSS: (1) isotropic deposition; (2) Aluminum-sputter deposition; (3) isotropic etching; (4) anisotropic etching; and (5) sequential process steps. These results make the accuracy of the 3-D MULSS clear, and also show that it is possible to stably simulate the sequential process steps

Keywords

ULSI; circuit analysis computing; digital simulation; etching; sputter deposition; surface topography; 3D MULSS; 3D topography simulator; ULSI; anisotropic etching; balance equation; isotropic deposition; isotropic etching; material topography; probe size; sequential process steps; sputter deposition; surface advancement; Anisotropic magnetoresistance; Atomic layer deposition; Circuit simulation; Equations; Etching; Large scale integration; Mathematical model; Probes; Surface topography; Ultra large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.557710

Filename

557710