DocumentCode :
1327830
Title :
Advanced controlling scheme for a DRAM voltage generator system
Author :
Weinfurtner, Oliver ; Storaska, Daniel ; Hsu, Louis
Author_Institution :
Infineon Technol., Hopewell Junction, NY, USA
Volume :
35
Issue :
4
fYear :
2000
fDate :
4/1/2000 12:00:00 AM
Firstpage :
552
Lastpage :
563
Abstract :
An brief overview is given of the voltage generator system of a 1-Gb synchronous DRAM. The design serves as an example for a state-of-the-art DRAM voltage generator system. A general analysis of the required controlling functionality is derived. A universal and flexible controlling scheme for a voltage generator system is presented, which can easily be modified for future voltage generator design. The main aspect of this controlling scheme is a clear separation between logic (digital) controlling functions and (analog) voltage generating functions. A control path that supplies the various voltage generator blocks with configuration information is introduced. Last, the control path is shown to have an additional advantage of increased testability. Hardware results verifying the concept are presented.
Keywords :
DRAM chips; design for testability; finite state machines; integrated circuit design; 1 Gbit; DRAM; analog voltage generating functions; controlling functionality; digital controlling functions; testability; voltage generator system; Circuits; Control systems; Hardware; Logic; Parasitic capacitance; Power generation; Random access memory; Synchronous generators; System testing; Voltage control;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.839915
Filename :
839915
Link To Document :
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