DocumentCode :
1327854
Title :
A Statistical Model of Erratic Behaviors in Flash Memory Arrays
Author :
Chimenton, Andrea ; Zambelli, Cristian ; Olivo, Piero
Author_Institution :
Dipt. di Ing., Univ. di Ferrara, Ferrara, Italy
Volume :
58
Issue :
11
fYear :
2011
Firstpage :
3707
Lastpage :
3711
Abstract :
We present a statistical model of erratic behaviors in Flash memory arrays based on a Markov chain model. The model parameters are experimentally evaluated through short-program/erase-cycling characterizations. The model is suitable for Monte Carlo simulations of Flash memory arrays through which the presence of tail bits in the threshold voltage distribution can be correctly predicted. Finally, an application to NAND architectures is discussed in relation to overprogramming issue.
Keywords :
Markov processes; Monte Carlo methods; NAND circuits; flash memories; logic arrays; logic design; Markov chain model; Monte Carlo simulation; NAND architecture; erase cycling characterization; erratic behavior; flash memory arrays; overprogramming issue; short program characterization; statistical model; Computer architecture; Flash memory; Markov processes; Microprocessors; Reliability; Threshold voltage; Tunneling; Electrical characterization; Flash memory; nonvolatile memory; reliability;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2011.2165722
Filename :
6026231
Link To Document :
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