DocumentCode
1327854
Title
A Statistical Model of Erratic Behaviors in Flash Memory Arrays
Author
Chimenton, Andrea ; Zambelli, Cristian ; Olivo, Piero
Author_Institution
Dipt. di Ing., Univ. di Ferrara, Ferrara, Italy
Volume
58
Issue
11
fYear
2011
Firstpage
3707
Lastpage
3711
Abstract
We present a statistical model of erratic behaviors in Flash memory arrays based on a Markov chain model. The model parameters are experimentally evaluated through short-program/erase-cycling characterizations. The model is suitable for Monte Carlo simulations of Flash memory arrays through which the presence of tail bits in the threshold voltage distribution can be correctly predicted. Finally, an application to NAND architectures is discussed in relation to overprogramming issue.
Keywords
Markov processes; Monte Carlo methods; NAND circuits; flash memories; logic arrays; logic design; Markov chain model; Monte Carlo simulation; NAND architecture; erase cycling characterization; erratic behavior; flash memory arrays; overprogramming issue; short program characterization; statistical model; Computer architecture; Flash memory; Markov processes; Microprocessors; Reliability; Threshold voltage; Tunneling; Electrical characterization; Flash memory; nonvolatile memory; reliability;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2011.2165722
Filename
6026231
Link To Document