• DocumentCode
    1327864
  • Title

    A VT generator

  • Author

    Viswanathan, T.R. ; Nagaraj, Kanthi

  • Author_Institution
    Dept. of Electr. Eng., Waterloo Univ., Ont., Canada
  • Volume
    11
  • Issue
    2
  • fYear
    1986
  • fDate
    4/1/1986 12:00:00 AM
  • Firstpage
    87
  • Lastpage
    88
  • Abstract
    In MOS circuits, there is a need to generate a voltage equal to the threshold voltage VT of the MOSFETs and a current equal to KVT2 (where K is the conduction parameter of a MOSFET) for the purposes of supply-independent biasing and temperature compensation. A circuit which generates these quantities is presented.
  • Keywords
    field effect integrated circuits; reference circuits; MOS circuits; MOSFETs; supply-independent biasing; temperature compensation; threshold voltage; voltage generation; Generators; Geometry; Logic gates; MOSFET; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electrical Engineering Journal, Canadian
  • Publisher
    ieee
  • ISSN
    0700-9216
  • Type

    jour

  • DOI
    10.1109/CEEJ.1986.6593750
  • Filename
    6593750
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1327864