Title :
Entirely aluminum free 905-nm wavelength buried heterostructure laser by reactive ion etching and semi-insulating GaInP:Fe regrowth
Author :
Lourdudoss, S. ; Ovtchinnikov, A. ; Kjebon, O. ; Nilsson, S. ; Bäckbom, L. ; Klinga, T. ; Holz, R.
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Kista, Sweden
fDate :
2/1/1997 12:00:00 AM
Abstract :
Selective regrowth of semi-insulating Ga0.51In0.49 P: Fe (resistivity ≈1×1012 Ω cm) has been realized for the first time to fabricate entirely Al free buried heterostructure GaInP/GaInAsP/GaAs laser emitting at 905 mn. The fabrication procedure and the laser characteristics are presented,
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; iron; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; sputter etching; 905 nm; GaInP:Fe-GaInAsP-GaAs; III-V semiconductors; buried heterostructure laser; fabrication procedure; laser characteristics; reactive ion etching; selective regrowth; semi-insulating regrowth; Aluminum; Etching; Gallium arsenide; Gold; Indium phosphide; Iron; Laboratories; Laser modes; Pump lasers; Scanning electron microscopy;
Journal_Title :
Electron Devices, IEEE Transactions on
