Title :
A study of the validity of capacitance-based method for extracting the effective channel length of MOSFET´s
Author :
Latif, Z. ; Ortiz-Conde, A. ; Liou, J.J. ; Sánchez, F. J Garcla
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA
fDate :
2/1/1997 12:00:00 AM
Abstract :
The capacitance-based method (C-V method) is a straightforward method for extracting the effective channel length of MOSFETs. This paper investigates the validity of such a method based on results simulated from a two-dimensional (2-D) device simulator. The effective channel length extracted from the C-V method is also compared with those obtained from other methods reported in the literature
Keywords :
MOSFET; capacitance; digital simulation; semiconductor device models; 2D device simulator; MOSFETs; capacitance-based method; effective channel length; Capacitance; Current measurement; Data mining; Doping; Electric variables; MOSFET circuits; Numerical analysis; Substrates; Two dimensional displays; Voltage control;
Journal_Title :
Electron Devices, IEEE Transactions on
