A simple subcircuit extension of the BSIM3v3 model for CMOS RF design

Author

Tin, Suet Fong ; Osman, Ashraf A. ; Mayaram, Kartikeya ; Hu, Chenming

Author_Institution

Cypress Semicond., Woodinville, WA, USA

Volume

35

Issue

4

fYear

2000

fDate

4/1/2000 12:00:00 AM

Firstpage

612

Lastpage

624

Abstract

An accurate and simple lumped-element extension of the BSIM3v3 MOSFET model for small-signal radio-frequency circuit simulation is proposed and investigated. Detailed comparisons of the small-signal y and s parameters with both two-dimensional device simulations and measurement data are presented. A procedure is developed to extract the values of two lumped resistors-the only added elements. The non-quasi-static and substrate effects can be modeled with these two resistors to significantly improve the model accuracy up to a frequency of 10 GHz, which is about 70% of the f/sub T/ of the 0.5 /spl mu/m NMOS transistor.

Keywords

CMOS integrated circuits; MOSFET; S-parameters; UHF field effect transistors; UHF integrated circuits; circuit simulation; equivalent circuits; field effect MMIC; integrated circuit design; integrated circuit modelling; microwave field effect transistors; semiconductor device models; 0.5 micron; 10 GHz; 2D device simulations; BSIM3v3 model; CMOS RF design; MOSFET model; lumped-element extension; nonquasi-static effects; parameter extraction; radiofrequency circuit simulation; small-signal RF circuit simulation; subcircuit extension; substrate effects; Circuit simulation; Data mining; Integrated circuit modeling; MOSFET circuits; Parameter extraction; Radio frequency; Resistors; Semiconductor device modeling; Tin;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.839921

Filename

839921