A temperature-dependent MOSFET inversion layer carrier mobility model for device and circuit simulation

Author

Cheng, Baohong ; Woo, Jason

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

44

Issue

2

fYear

1997

fDate

2/1/1997 12:00:00 AM

Firstpage

343

Lastpage

345

Abstract

A new semi-empirical model for electron and hole mobilities in MOSFET inversion layers is proposed. For the first time, the magnitude of the key parameter η, which defines the effective transverse field, is found to be a continuous function of temperature for both electrons and holes. The effective transverse field dependences of the universal mobility curves are observed to differ between the electrons and holes, particularly at low temperatures. The proposed model is verified by comparison of experimental data and simulated MOSFET I-V characteristics over a temperature range from 77 K to 313 K

Keywords

MOS integrated circuits; MOSFET; VLSI; carrier mobility; circuit analysis computing; integrated circuit modelling; inversion layers; semiconductor device models; 77 to 343 K; I-V characteristics; MOSFET inversion layer; carrier mobility model; circuit simulation; continuous function; device simulation; effective transverse field; electron mobilities; hole mobilities; semi-empirical model; temperature-dependent model; universal mobility curves; Circuit simulation; MOSFET circuits; Nitrogen; Numerical analysis; Numerical simulation; Parasitic capacitance; Physics; Semiconductor devices; Solid state circuits; Testing;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.557730

Filename

557730