مرکز منطقه ای اطلاع رساني علوم و فناوري - Application of Post-<formula formulatype="inline"> <img src="/images/tex/594.gif" alt="\\hbox {HfO}_{2}"> </formula> Fluorine Plasma Treatment for Improvement of <formula formulatype="inline"> <img src="/images/tex/19542.gif" alt="\\hbox {In}

Title :

Application of Post- $\\hbox {HfO}_{2}$ Fluorine Plasma Treatment for Improvement of $\\hbox {In}_{0.53}\\hbox</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Chen, Yen-Ting ; Wang, Yanzhen ; Xue, Fei ; Zhou, Fei ; Lee, Jack C.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>32</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>11</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2011</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1531</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>1533</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Notable improvements in the HfO<sub>2</sub>/In<sub>0.53</sub> Ga<sub>0.47</sub>As gate stack have been achieved by a post- HfO<sub>2</sub> fluorine plasma treatment, including excellent interface quality of low-equivalent-oxide-thickness HfO<sub>2</sub> (1.4 nm) directly on In<sub>0.53</sub>Ga<sub>0.47</sub>As with no interface passivation layer, over five-times reduction in interface trap density from 2.8 × 10<sup>12</sup> to 4.9 × 10<sup>11</sup> cm<sup>-2</sup>·eV<sup>-1</sup>, improved subthreshold swing from 127 to 109 mV/dec, and reduced <i>Id</i>-<i>Vg</i> hysteresis in pulsed <i>Id</i>-<i>Vg</i> measurement. Consequently, improved electrical performances have been achieved in 29% higher effective channel mobility and 29% higher drive current.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>III-V semiconductors; MOSFET; gallium arsenide; hafnium compounds; indium compounds; passivation; plasma materials processing; HfO<sub>2</sub>; HfO<sub>2</sub>-In<sub>0.53</sub>Ga<sub>0.47</sub>As; MOSFET; channel mobility; drive current; fluorine plasma treatment; interface passivation layer; interface trap density; low-equivalent- oxide-thickness interface quality; size 1.4 nm; subthreshold swing; Charge carrier processes; Hafnium compounds; Indium gallium arsenide; Logic gates; Passivation; Performance evaluation; Plasmas; <formula formulatype=$ $hbox{HfO}_{2}$ ; Fluorine plasma treatment; InGaAs;